IXTH6N100D2【PDF 2/5 页】MOSFET N-CH 1000V 6A TO247

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IXTA6N100D2 IXTP6N100D2

IXTH6N100D2

Symbol Test Conditions

(T J = 25 ° C, Unless Otherwise Specified)

Characteristic Values

Min. Typ. Max.

TO-220 (IXTP) Outline

g fs

C iss

C oss

C rss

t d(on)

t r

t d(off)

t f

V DS = 30V, I D = 3A, Note 1

V GS = -10V, V DS = 25V, f = 1MHz

Resistive Switching Times

V GS = ± 5V, V DS = 500V, I D = 3A

R G = 2.4 Ω (External)

2.6

4.2

2650

167

41

25

80

34

47

S

pF

pF

pF

ns

ns

ns

ns

Q g(on)

Q gs

V GS = 5V, V DS = 500V, I D = 3A

95

11

nC

nC

Pins:

1 - Gate

3 - Source

2 - Drain

4 - Drain

Q gd

51

nC

R thJC

R thCS

TO-220

TO-247

0.50

0.21

0.41 ° C/W

° C/W

° C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol

Test Conditions

Min. Typ. Max.

SOA

V DS = 800V, I D = 225mA, T C = 75 ° C, Tp = 5s

180

W

Source-Drain Diode

Symbol Test Conditions

(T J = 25 ° C, Unless Otherwise Specified)

Characteristic Values

Min. Typ. Max.

TO-247 (IXTH) AD Outline

V SD

t rr

I RM

Q RM

I F = 6A, V GS = -10V, Note 1

I F = 3A, -di/dt = 100A/ μ s

V R = 100V, V GS = -10V

0.8

952

16

7.6

1.3

V

ns

A

μ C

Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.

TO-263 (IXTA) Outline

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

A

b

b2

4.06

0.51

1.14

4.83

0.99

1.40

.160

.020

.045

.190

.039

.055

c

c2

D

D1

E

0.40

1.14

8.64

8.00

9.65

0.74

1.40

9.65

8.89

10.41

.016

.045

.340

.280

.380

.029

.055

.380

.320

.405

1 = Gate

2 = Drain

3 = Source

1.

2.

3.

4.

Gate

Drain

Source

Drain

E1

e

L

L1

L2

L3

6.22

2.54

14.61

2.29

1.02

1.27

8.13

BSC

15.88

2.79

1.40

1.78

.270

.100

.575

.090

.040

.050

.320

BSC

.625

.110

.055

.070

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344 6,727,585 7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692 7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

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